Datasheet > 2SA1746_07

2SA1746_07

更新时间： 2024-11-21 07:29:43

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	29K
描述
Silicon PNP Epitaxial Planar Transistor

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数据手册

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2SA1746_07 数据手册

LOW VCE (s a t ) 2 S A1 7 4 6

Silicon PNP Epitaxial Planar Transistor

Application : Chopper Regulator, Switch and General Purpose

External Dimensions FM100(TO3PF)

■Absolute maximum ratings

■

Electrical Characteristics

(Ta=25°C)

Ratings

–10max

–50min

50min

Symbol

Unit

Symbol

I^CBO

Conditions

Unit

µA

±0.2

5.5

±0.2

15.6

±0.2

3.45

V^CBO

VCEO

VEBO

–70

V^CB=–70V

–50

IEBO

V^EB=–6V

–6

–12(Pulse–20)

–4

V(BR)CEO

hFE

I^C=–25mA

±0.2

ø3.3

V^CE=–1V, IC=–5A

I^C=–5A, IB=–80mA

V^CE=–12V, IE=1A

V^CB=–10V, f=1MHz

–0.5max

–1.2max

25typ

VCE(sat)

VBE(sat)

60(Tc=25°C)

150

°C

1.75

2.15

0.8

MHz

400typ

Tstg

COB

–55 +150

+0.2

-0.1

1.05

+0.2

±0.1

1.5

±0.1

0.65

-0.1

5.45

1.5

3.35

■Typical Switching Characteristics (Common Emitter)

4.4

Weight : Approx 6.5g

a. Part No.

b. Lot No.

VCC

(V)

R^L

(Ω)

I^C

(A)

VBB1

(V)

V^BB2

(V)

I^B1

(mA)

tstg

(µs)

I^B2

(mA)

ton

(µs)

–20

–5

–10

–80

0.6typ

0.3typ

0.5typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–1V)

–12

–10

–8

–1.5

–12mA

–10

–70mA

–1.0

–0.5

–8

–6

–4

–2

–50mA

–6

–4

IC=–10A

I^B=–10mA

–2

–5A

–3A

–1A

–10

–1

–2

–3

–4

–5

–6

–3

–100

Base Current IB(mA)

–1000

–0.5

–1.0

–1.5

Collector-Emitter Voltage VCE(V)

Base-Emittor Voltage V^BE(V)

–

^j-at Characteristics

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

(VCE=–1V)

(V^CE=–1V)

500

125˚C

Typ

0.5

100

0.2

–5

100

Time t(ms)

1000

–0.03

–0.1

–0.5

–1

–10

–0.03

–0.1

–0.5

–1

–10

Collector Current I^C(A)

–

Safe Operating Area (Single Pulse)

fT IE Characteristics (Typical)

–

Pc Ta Derating

(VCE=–12V)

–30

–10

–5

Typ

–1

Without Heatsink

Natural Cooling

Without Heatsink

3.5

–0.3

–3

0.1

–10

–50

–100

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

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与2SA1746_07相关器件

型号	品牌	获取价格	描述	数据表
2SA1747	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1747R	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1747TMG	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SA1747TSK	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SA1748	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
2SA1748	PANASONIC	获取价格	Silicon PNP epitaxial planer type
2SA1748	TYSEMI	获取价格	High transition frequency fT. Small collector output capacitance Cob.
2SA1748_15	KEXIN	获取价格	PNP Transistors
2SA1748G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C
2SA1748GR	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS C

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