Datasheet > 2SA1619S

2SA1619S

更新时间： 2024-11-14 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	59K
描述
TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 1A I(C) \| TO-92

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中文翻译

获取价格

数据手册

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2SA1619S 数据手册

Transistor

2SA1619, 2SA1619A

Silicon PNP epitaxial planer type

For low-frequency power amplification and driver amplification

Complementary to 2SC4208 and 2SC4208A

Unit: mm

5.0±0.2

4.0±0.2

Features

■

●

Complementary pair with 2SC4208 and 2SC4208A.

●

Allowing supply with the radial taping and automatic insertion

possible.

Absolute Maximum Ratings (Ta=25˚C)

0.7±0.1

■

Parameter

Symbol

Ratings

–30

Unit

2SA1619

Collector to

base voltage

Collector to

emitter voltage

V_CBO

2SA1619A

2SA1619

–60

0.45⁺^–0⁰^.^.¹¹⁵

1.27

0.45⁺^–0⁰^.^.¹¹⁵

–25

V_CEO

1.27

2SA1619A

–50

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

–5

1:Emitter

2:Collector

3:Base

–1

2 3

2.54±0.15

– 0.5

TO–92NL Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

Collector cutoff current

V_CB= –20V, I_E= 0

– 0.1

µA

Collector to base

voltage

2SA1619

2SA1619A

–30

–60

–25

–50

–5

V_CBO

I_C= –10µA, I_E= 0

Collector to emitter 2SA1619

V_CEO

V_EBO

I_C= –10mA, I_B= 0

voltage

2SA1619A

Emitter to base voltage

I_E= –10µA, I_C= 0

h_FE1

V_CE= –10V, I_C= –150mA

V_CE= –10V, I_C= –500mA

I_C= –300mA, I_B= –30mA

160

340

Forward current transfer ratio

h_FE2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.35

–1.1

200

– 0.6

–1.5

Transition frequency

f_T

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

MHz

Collector output capacitance

C_ob

^*h_FE1Rank classification

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3 4

中文翻译

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