5秒后页面跳转
2SA1620-Y(TE85L,F) PDF预览

2SA1620-Y(TE85L,F)

更新时间: 2024-02-19 11:15:21
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
3页 128K
描述
TRANSISTOR,BJT,PNP,80V V(BR)CEO,300MA I(C),SC-59

2SA1620-Y(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.83最大集电极电流 (IC):0.3 A
配置:Single最小直流电流增益 (hFE):120
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):70 MHz
Base Number Matches:1

2SA1620-Y(TE85L,F) 数据手册

 浏览型号2SA1620-Y(TE85L,F)的Datasheet PDF文件第2页浏览型号2SA1620-Y(TE85L,F)的Datasheet PDF文件第3页 
2SA1620  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1620  
Audio Frequency Amplifier Applications  
Unit: mm  
Complementary to 2SC4209  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
80  
80  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
300  
60  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
T
stg  
55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
0.1  
0.1  
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −5 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
V
I
= −5 mA, I = 0  
80  
(BR) CEO  
C
B
h
h
FE (1)  
(Note)  
FE (2)  
V
V
= −2 V, I = −50 mA  
70  
240  
CE  
C
DC current gain  
= −2 V, I = −200 mA  
40  
0.4  
0.8  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −200 mA, I = −20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= −2 V, I = −5 mA  
0.55  
70  
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= −10 V, I = −10 mA  
100  
14  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
ob  
E
Note: h classification, O: 70~140, Y: 120~240  
FE  
Marking  
1
2007-11-01  

与2SA1620-Y(TE85L,F)相关器件

型号 品牌 获取价格 描述 数据表
2SA1620YTE85L TOSHIBA

获取价格

TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1620YTE85R TOSHIBA

获取价格

TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1621 TOSHIBA

获取价格

TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)
2SA1621 FOSHAN

获取价格

SOT-23
2SA1621_07 TOSHIBA

获取价格

Audio Power Amplifier Applications
2SA1621O ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | SC-59
2SA1621-O TOSHIBA

获取价格

TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SA1621OTE85R TOSHIBA

获取价格

TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1621TE85L TOSHIBA

获取价格

暂无描述
2SA1621TE85R TOSHIBA

获取价格

TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma