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2SA1621_07 PDF预览

2SA1621_07

更新时间： 2024-01-06 10:56:27
品牌 Logo 应用领域
东芝 - TOSHIBA 放大器功率放大器
页数 文件大小 规格书
3页 139K
描述
Audio Power Amplifier Applications

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中文翻译

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2SA1621_07 数据手册

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2SA1621  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1621  
Audio Power Amplifier Applications  
Unit: mm  
High h : h  
= 100~320  
FE FE  
•
Complementary to 2SC4210  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−35  
−30  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−5  
V
I
−800  
−160  
200  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
j
150  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −35 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −5 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I
= −10 mA, I = 0  
−30  
C
B
h
FE (1)  
(Note)  
V
V
= −1 V, I = −100 mA  
100  
⎯
320  
CE  
C
DC current gain  
h
= −1 V, I = −700 mA  
35  
⎯
⎯
⎯
⎯
−0.7  
−0.8  
⎯
FE (2)  
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −500 mA, I = −20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= −1 V, I = −10 mA  
−0.5  
⎯
⎯
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= −5 V, I = −10 mA  
120  
19  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
⎯
ob  
E
Note: h  
classification O: 100~200, Y: 160~320  
FE (1)  
Marking  
1
2007-11-01  
123

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与2SA1621_07相关器件

型号 品牌 获取价格 描述 数据表
2SA1621O ETC

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 		TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | SC-59
2SA1621-O TOSHIBA

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 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SA1621OTE85R TOSHIBA

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 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1621TE85L TOSHIBA

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 		暂无描述
2SA1621TE85R TOSHIBA

获取价格

 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1621Y ETC

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 		TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | SC-59
2SA1621-Y TOSHIBA

获取价格

 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59,
2SA1621-Y(TE85L) TOSHIBA

获取价格

 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1621YTE85L TOSHIBA

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 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1621YTE85R TOSHIBA

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 		TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma

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