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2SA1620_07 PDF预览

2SA1620_07

更新时间： 2024-09-28 07:29:43
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
3页 129K
描述
Audio Frequency Amplifier Applications

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中文翻译

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2SA1620_07 数据手册

 浏览型号2SA1620_07的Datasheet PDF文件第2页浏览型号2SA1620_07的Datasheet PDF文件第3页 
2SA1620  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1620  
Audio Frequency Amplifier Applications  
Unit: mm  
Complementary to 2SC4209  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
−80  
−80  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
−5  
V
I
−300  
−60  
mA  
mA  
mW  
°C  
°C  
C
Base current  
I
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
200  
C
T
j
150  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TO-236MOD  
SC-59  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-3F1A  
Weight: 0.012 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
⎯
−0.1  
−0.1  
⎯
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −5 V, I = 0  
C
EBO  
Collector-emitter breakdown voltage  
V
I
= −5 mA, I = 0  
−80  
(BR) CEO  
C
B
h
h
FE (1)  
(Note)  
FE (2)  
V
V
= −2 V, I = −50 mA  
70  
⎯
240  
CE  
C
DC current gain  
= −2 V, I = −200 mA  
40  
⎯
⎯
⎯
⎯
−0.4  
−0.8  
⎯
CE  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= −200 mA, I = −20 mA  
V
V
CE (sat)  
C
B
V
V
V
V
= −2 V, I = −5 mA  
−0.55  
70  
⎯
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= −10 V, I = −10 mA  
100  
14  
MHz  
pF  
T
C
Collector output capacitance  
C
= −10 V, I = 0, f = 1 MHz  
⎯
⎯
ob  
E
Note: h classification, O: 70~140, Y: 120~240  
FE  
Marking  
1
2007-11-01  
123

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与2SA1620_07相关器件

型号 品牌 获取价格 描述 数据表
2SA1620O ETC

获取价格

 		TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 300MA I(C) | SC-59
2SA1620-O TOSHIBA

获取价格

 		TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MO
2SA1620-O(TE85L) TOSHIBA

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 		TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1620OTE85L TOSHIBA

获取价格

 		TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1620OTE85R TOSHIBA

获取价格

 		TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1620TE85L TOSHIBA

获取价格

 		TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma
2SA1620Y ETC

获取价格

 		TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 300MA I(C) | SC-59
2SA1620-Y TOSHIBA

获取价格

 		TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, SC-59, TO-236MO
2SA1620-Y(TE85L) TOSHIBA

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 		2SA1620-Y(TE85L)
2SA1620-Y(TE85L,F) TOSHIBA

获取价格

 		TRANSISTOR,BJT,PNP,80V V(BR)CEO,300MA I(C),SC-59

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