5秒后页面跳转
2SA1618-GR(TE85L,F) PDF预览

2SA1618-GR(TE85L,F)

更新时间: 2024-11-15 21:15:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 202K
描述
TRANSISTOR,BJT,ARRAY,COMM EMITTER,PNP,50V V(BR)CEO,150MA I(C),TSOP

2SA1618-GR(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.61最大集电极电流 (IC):0.15 A
最小直流电流增益 (hFE):200最高工作温度:125 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):80 MHzBase Number Matches:1

2SA1618-GR(TE85L,F) 数据手册

 浏览型号2SA1618-GR(TE85L,F)的Datasheet PDF文件第2页浏览型号2SA1618-GR(TE85L,F)的Datasheet PDF文件第3页浏览型号2SA1618-GR(TE85L,F)的Datasheet PDF文件第4页 
2SA1618  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)  
2SA1618  
Audio Frequency General Purpose Amplifier Applications  
Unit: mm  
Small package (dual type)  
High voltage and high current: V  
= 50 V, I = 150 mA (max)  
CEO  
C
High h  
h
= 120~400  
linearity: h  
FE: FE  
Excellent h  
(I = 0.1 mA)/ h  
C
(I = 2 mA)  
FE  
FE  
FE  
C
= 0.95 (typ.)  
Complementary to 2SC4207  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
JEDEC  
JEITA  
I
150  
30  
mA  
mA  
C
Base current  
I
B
TOSHIBA  
2-3L1A  
P
C
Collector power dissipation  
300  
mW  
(Note 1)  
Weight: 0.014 g (typ.)  
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
stg  
55~125  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Marking  
Equivalent Circuit (top view)  
1
2007-11-01  

与2SA1618-GR(TE85L,F)相关器件

型号 品牌 获取价格 描述 数据表
2SA1618GRTE85R TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
2SA1618TE85L TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
2SA1618Y ETC

获取价格

TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP
2SA1618-Y TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SMV, 2-3L1A, 5 PIN,
2SA1618-Y(T5LIMASF TOSHIBA

获取价格

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
2SA1618YTE85R TOSHIBA

获取价格

TRANSISTOR 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
2SA1619 PANASONIC

获取价格

Silicon PNP epitaxial planer type
2SA1619 ROHM

获取价格

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
2SA1619/2SA1619A ETC

获取价格

2SA1619. 2SA1619A - PNP Transistor
2SA1619A PANASONIC

获取价格

Silicon PNP epitaxial planer type