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2SA1611_15 PDF预览

2SA1611_15

更新时间: 2024-02-22 00:00:05
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
页数 文件大小 规格书
2页 124K
描述
PNP TRANSISTOR

2SA1611_15 数据手册

 浏览型号2SA1611_15的Datasheet PDF文件第2页 
RoHS  
2SA1611  
SOT-323  
2SA1611 TRANSISTOR (PNP)  
1. BASE  
2. EMITTER  
FEATURES  
Power dissipation  
1. 25¡ À0. 05  
3. COLLECTOR  
PCM  
: 0.15  
W (Tamb=25)  
2. 30¡ À0. 05  
Collector current  
ICM  
: -0.1  
A
Collector-base voltage  
(BR)CBO : -60  
V
V
Operating and storage junction temperature range  
Unit: mm  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-100µA, IE=0  
Ic=-1mA, IB=0  
MIN  
-60  
-50  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V
V
IE=-100µA, IC=0  
µA  
µA  
VCB=-60V,IE=0  
-0.1  
-0.1  
600  
-0.3  
-0.68  
IEBO  
VEB=-5V,IC=0  
hFE(1)  
DC current gain  
VCE=-6V, IC=-1mA  
90  
VCE(sat)  
VBE  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=-100mA, IB=-10mA  
CE=-6V, IC=-1mA  
-0.58  
V
MHz  
pF  
Transition frequency  
fT  
VCE=-6V, IC=-10mA  
180  
4.5  
Cob  
Collector output capacitance  
V
CB=-10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
M4  
M5  
M6  
M7  
Rank  
WEJ EL9E0-180CTRONIC CO.,LTD  
135-270  
200-400  
300-600  
Range  
M4  
M5  
M6  
M7  
Marking  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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