Datasheet > 2SA1611-M7

2SA1611-M7

更新时间： 2024-11-12 01:05:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1178K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1611-M7 数据手册

SMD Type

Transistors

PNP Transistors

2SA1611

■ Features

● High DC Current Gain

● High Voltage

● Complementary to 2SC4177

1.Base

2.Emitter

3.Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-60

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

-100

150

℃/W

θJA

833

150

℃

Storage Temperature range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-60

-50

-5

Ic= -100 μA， I

Ic= -1 mA，I =0

= -100μA， I

CB= -60 V , I =0

EB= -5V , I =0

E=0

C=0

CBO

EBO

-0.1

-0.3

-1.2

-0.68

600

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-100 mA, I

=-10 mA

=-100 mA, I

CE= -6V, I

= -1mA

-0.58

DC current gain

(Note.1)

Collector output capacitance

Transition frequency

CB= -10V,I

CE= -6V, I

=0, f=1MHz

4.5

C= -10mA

180

MHz

Note.1: Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

■ Classification of hfe

Type

Range

Marking

2SA1611-M4

90-180

2SA1611-M5

135-270

2SA1611-M6

2SA1611-M7

300-600

200-400

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