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2SA1529 PDF预览

2SA1529

更新时间: 2024-01-09 21:29:27
品牌 Logo 应用领域
三洋 - SANYO 晶体晶体管
页数 文件大小 规格书
2页 62K
描述
Switching Applications(with Bias Resistance)

2SA1529 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.51
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SA1529 数据手册

 浏览型号2SA1529的Datasheet PDF文件第2页 

与2SA1529相关器件

型号 品牌 获取价格 描述 数据表
2SA1529-AA ONSEMI

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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2SA1529-AB ONSEMI

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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
2SA1530 MITSUBISHI

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, PNP, Silicon, SC-59, 3 PIN
2SA1530-12-1S MITSUBISHI

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1530-12-1T MITSUBISHI

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1530A ISAHAYA

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FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Ultra super mini type)
2SA1530AQ ISAHAYA

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Transistor
2SA1530AR ISAHAYA

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Transistor
2SA1530AS ISAHAYA

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Transistor
2SA1530-T12-1Q MITSUBISHI

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236