2SA1530AS

更新时间： 2024-02-22 08:33:07

品牌	Logo	应用领域
谏早电子 - ISAHAYA		晶体晶体管
页数	文件大小	规格书
4页	438K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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2SA1530AS 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

2SA1530AS 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SA1530A

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Ultra super mini type)

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SA1530A is a super mini package resin sealed

silicon PNP epitaxial transistor,

It is designed for low frequency voltage application.

FEATURE

●Small collector to emitter saturation voltage.

VCE(sat)=-0.3Vmax（@Ic=-100mA、IB=-10mA）

●Excellent linearity of DC forward gain.

●Super mini package for easy mounting

APPLICATION

For Hybrid IC,small type machine low frequency voltage

Amplify application.

JEITA：SC-59

TERMINAL CONNECTER

①：BASE

MAXIMUM RATINGS（Ta=25℃）

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

-60

Unit

②：EMITTER

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

③：COLLECTOR

-50

-6

-150

℃

P_c

Collector dissipation

Junction temperature

Storage temperature

200

T_j

＋150

-55～＋150

T_stg

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

-50

Typ

Max

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

C to E Saturation Vlotage

Gain bandwidth product

Collector output capacitance

Noise figure

V(BR)CEO

ICBO

IEBO

I_C= -100μA , RBE= ∞

V _CB= -60V , I _E= 0mA

V _EB= -4V , I _C= 0mA

μA

-0.1

560

hFE

_CE= -6V , I_C= -1mA

_CE= -6V , I_C= -0.1mA

120

hFE

VCE(sat) I _C= -100mA , I _B= -10mA

-0.3

Cob

_CE= -6V , I _E= 10mA

V _CB= -6V , I _E= 0mA,f=1MHz

V _CE= -6V , I _E= 0.3mA,f=100Hz,RG=10kΩ

200

MHz

※） It shows hFE classification in below table.

Item

120～270

180～390

270～560

ｈＦＥ Item

ISAHAYA ELECTRONICS CORPORATION

12 3 4

中文翻译

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与2SA1530AS相关器件

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2SA1530-T12-1Q	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1530-T12-1R	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
2SA1530-T12-1S	MITSUBISHI	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236
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2SA1531/2SA1531A	ETC	获取价格	2SA1531. 2SA1531A - PNP Transistor
2SA1531A	PANASONIC	获取价格	Silicon PNP epitaxial planer type
2SA1531A	KEXIN	获取价格	Silicon PNP Epitaxial Planar Type
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