SMD Type
Transistors
PNP Transistors
2SA1531A
■ Features
● Low noise voltage NV.
● High foward current transfer ratio hFE
● Complementary to 2SC3929A
.
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-55
Unit
V
VCBO
VCEO
VEBO
-55
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-50
mA
P
C
150
mW
T
J
150
℃
Storage Temperature range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-55
-55
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
E=0
Ic= -2 mA,I = 0
B
I
E
= -100μA, I
C=0
I
CBO
EBO
V
V
CB= -50 V , I
E
=0
-0.1
-0.1
-0.6
-1.2
-1
uA
V
I
EB= -5 V , I
C=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
C
=-100 mA, I
B
=-10 mA
V
I
C=-100 mA, IB=-10 mA
V
BE
V
V
CE= -1V, I
CE= -5V, I
C
= -100mA
= -2mA
-0.7
80
DC current gain
h
FE
C
180
700
VC
G
E
= –10V,I
C
= –1mA,
Noise voltage
NV
V
= 80dB R
g
= 100kΩ ,
150
mV
Function = FLAT
Transition frequency
f
T
V
CE= -10V, I = 2mA,f=200MHz
E
MHz
■ Classification of hfe
Type
Range
Marking
2SA1531A-R
180-360
HR
2SA1531A-S
2SA1531A-T
360-700
HT
260-520
HS
1
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