Datasheet > 2SA1495

2SA1495

更新时间： 2024-11-17 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	65K
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中文翻译

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2SA1495 数据手册

Power Transistors

2SA1495

Silicon PNP epitaxial planar type

Unit: mm

7.0±0.3

3.0±0.2

3.5±0.2

For high-speed switching

Features

High foward current transfer ratio h_FE

■

1.1±0.1

0.85±0.1

0.4±0.1

●

0.75±0.1

●

High-speed switching

●

High collector to base voltage V_CBO

2.3±0.2

●

I type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

4.6±0.4

1:Base

2:Collector

3:Emitter

I Type Package

Absolute Maximum Ratings (T =25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–400

–7

Unit

Unit: mm

7.0±0.3

3.5±0.2

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

2.0±0.2

3.0±0.2

0 to 0.15

–1.2

I_C

– 0.6

2.5

Collector power T_C=25°C

0.75±0.1

0.5 max.

0.9±0.1

1.1±0.1

P_C

0 to 0.15

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

T_stg

–55 to +150

2.3±0.2

3:Emitter

4.6±0.4

I Type Package (Y)

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

–100

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= –400V, I_E= 0

I_EBO

V_EB= –7V, I_C= 0

Collector to emitter voltage

V_CEO

I_C= –10mA, I_B= 0

V_CE= –5V, I_C= –100mA

–400

h_FE1

160

Forward current transfer ratio

h_FE2

_CE= –5V, I_C= –300mA

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= –300mA, I_B= –60mA

V_CE= –10V, I_C= –100mA, f = 1MHz

I_C= –300mA,

–1.0

–1.5

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

MHz

µs

1.0

3.5

1.0

I_B1= –60mA, I_B2= 60mA,

V_CC= –100V

µs

^*h_FE1Rank classification

Rank

h_FE1

30 to 60

50 to 100

80 to 160

12 3

中文翻译

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与2SA1495相关器件

型号	品牌	获取价格	描述	数据表
2SA1495H	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495O	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 600MA I(C) \| TO-221VAR
2SA1495OY	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495P	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 600MA I(C) \| TO-221VAR
2SA1495PY	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 400V V(BR)CEO \| 600MA I(C) \| TO-221VAR
2SA1495QY	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495TX	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1495Y	PANASONIC	获取价格	Power Bipolar Transistor, 0.6A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
2SA1496	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-23

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