生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.1 A | 配置: | Single |
最小直流电流增益 (hFE): | 300 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.75 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 80 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1378 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | SPAK | |
2SA1380 | SANYO |
获取价格 |
Ultrahigh-Definition CRT Display, Video Output Applications | |
2SA1380 | FOSHAN |
获取价格 |
TO-126F | |
2SA1380C | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 100MA I(C) | TO-126 | |
2SA1380C-CD | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast | |
2SA1380-CD | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast | |
2SA1380C-LS | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast | |
2SA1380C-LT | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast | |
2SA1380C-RA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast | |
2SA1380C-YA | ONSEMI |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast |