Datasheet > 2SA1376U

2SA1376U

更新时间： 2024-11-29 23:19:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	107K
描述
TRANSISTOR \| BJT \| PNP \| 180V V(BR)CEO \| 100MA I(C) \| TO-92

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2SA1376U 数据手册

DATA SHEET

SILICON TRANSISTORS

2SA1376, 1376A

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH VOLTAGE AMPLIFIERS

FEATURES

PACKAGE DRAWING (UNIT: mm)

•

High voltage

V^CEO: −180 V / −200 V

(2SA1376/2SA1376A)

Excellent h^FElinearity

•

High total power dissipation in small dimension:

P^T: 0.75 W

•

Complementary transistor with 2SC3478 and 2SC3478A

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

2SA1376/2SA1376A

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

P^T

Ratings

−200

−180/−200

−5

−100

−200

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (pulse)

Total power dissipation

Junction temperature

Storage temperature

0.75

°C

T^j

150

−55 to +150

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50%

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

2SA1376/2SA1376A

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

Conditions

V^CB= −200 V, I^E= 0

V^EB= −5 V, I^C= 0

V^CE= −10 V, I^C= −10 mA

V^CE= −10 V, I^C= −100 mA

V^CE= −10 V, I^C= −10 mA

I^C= −50 mA, I^B= −5 mA

V^CB= −30 V, I^E= 0, f = 1.0 MHz

V^CE= −10 V, I^E= 10 mA

MIN.

TYP.

MAX.

−100

Unit

−

I^EBO

h^FE1**

h^FE2**

V^BE**

V^CE(sat)**

V^BE(sat)**

C^ob

135

300/200 600/400

−

DC current gain

−600

−650

−0.2

−0.8

3.5

−700

−0.3

−1.2

4.0

DC base voltage

Collector saturation voltage

Base saturation voltage

Output capacitance

Gain bandwidth product

Turn-on time

MHz

µs

f^T

120

0.16

1.5

I^C= −10 mA, I^B1= −I^B2= −1 mA,

V^CC= –10 V

t^on

Turn-off time

t^off

** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16194EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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与2SA1376U相关器件

型号	品牌	获取价格	描述	数据表
2SA1376-U	NEC	获取价格	暂无描述
2SA1376U-A	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
2SA1376U-T	RENESAS	获取价格	2SA1376U-T
2SA1378	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 500MA I(C) \| SPAK
2SA1380	SANYO	获取价格	Ultrahigh-Definition CRT Display, Video Output Applications
2SA1380	FOSHAN	获取价格	TO-126F
2SA1380C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 200V V(BR)CEO \| 100MA I(C) \| TO-126
2SA1380C-CD	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1380-CD	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1380C-LS	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast

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