Datasheet > 2SA1313-Y(TE85R,F

2SA1313-Y(TE85R,F

更新时间： 2024-11-30 05:50:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	193K
描述
Small Signal Bipolar Transistor

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2SA1313-Y(TE85R,F 数据手册

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2SA1313

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1313

Audio Frequency Low Power Amplifier Applications

Unit: mm

Driver Stage Amplifier Applications

Switching Applications

•

Excellent h

linearity: h

= 25 (min)

FE (2)

at V

= −6 V, I = −400 mA

•

High voltage: V

= −50 V (min)

CEO

Complementary to 2SC3325

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

JEDEC

JEITA

TO-236MOD

−500

−50

°C

Base current

SC-59

Collector power dissipation

Junction temperature

Storage temperature range

200

TOSHIBA

2-3F1A

150

Weight: 0.012 g (typ.)

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Start of commercial production

1982-12

2014-03-01

12 3 4

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