Datasheet > 2SA1289-Q

2SA1289-Q

更新时间： 2024-09-18 04:22:59

品牌	Logo	应用领域
安森美 - ONSEMI		局域网开关晶体管
页数	文件大小	规格书
4页	36K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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2SA1289-Q 数据手册

Ordering number : EN1199E

2SA1289 / 2SC3253

SANYO Sem iconductors

DATA S HEET

PNP / NPN Epitaxial Planar Silicon Transistors

60V / 5A High-Speed Switching

Applications

2SA1289 / 2SC3253

Applications

•

Various inductance lamp drivers for electrical equipment.

Inverters, converters (flash, fluorescent lamp lighting circuit).

Power amp (high power car stereo, motor controller).

High-speed switching (switching regulator, driver).

•

Features

• Low saturation voltage.

• Excellent current dependence of h

• Short switching time.

Specifications ( ) : 2SA1289

Absolute Maximum Ratings at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Symbol

Conditions

Ratings

Unit

CBO

CEO

EBO

(--)80

(--)60

(--)5

(--)7

1.75

Collector Current (Pulse)

°C

Collector Dissipation

Tc=25°C

Junction Temperature

Storage Temperature

Tstg

150

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Collector Cutoff Current

Symbol

Conditions

=(--)40V, I =0A

Unit

min

max

(--)0.1

280*

CBO

Emitter Cutoff Current

DC Current Gain

=(--)4V, I =0A

EBO

=(--)2V, I =(--)1A

70*

Continued on next page.

* : The 2SA1289/2SC3253 are classified by 1A h as follows :

Rank

70 to 140

100 to 200

140 to 280

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83006 MS IM TC-00000109 / 72006FA MS IM TC-00000062 / 73102TN (KT) / 71598HA (KT) / D051MH (KOTO)

No.1199-1/4

12 3 4

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与2SA1289-Q相关器件

型号	品牌	获取价格	描述	数据表
2SA1289R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-220AB
2SA1289-R	ONSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SA1289S	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-220AB
2SA1289-S	ONSEMI	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
2SA1290	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SA1290	JMNIC	获取价格	Silicon PNP Power Transistors
2SA1290	ISC	获取价格	Silicon PNP Power Transistors
2SA1290	SANYO	获取价格	60V/7A High-Speed Switching Applications
2SA1290	NJSEMI	获取价格	Trans GP BJT PNP 60V 7A 3-Pin(3+Tab) TO-220AB
2SA1290Q	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 7A I(C) \| TO-220AB

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