是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大集电极电流 (IC): | 2 A |
配置: | Single | 最小直流电流增益 (hFE): | 120 |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 10 W |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1241Y | TOSHIBA | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) |
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2SA1241-Y | TOSHIBA | Power Amplifier Applications |
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2SA1241Y(Q) | TOSHIBA | TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252AA |
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2SA1241Y(SM) | TOSHIBA | TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252 |
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2SA1241-Y(T6L1,NQ) | TOSHIBA | Small Signal Bipolar Transistor |
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2SA1241-Y(T6L1YA,N) | TOSHIBA | Small Signal Bipolar Transistor |
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