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2SA1200Y PDF预览

2SA1200Y

更新时间: 2024-02-04 20:54:44
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
5页 116K
描述
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | SOT-89

2SA1200Y 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy零件包装代码:SC-62
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.45
外壳连接:COLLECTOR最大集电极电流 (IC):0.05 A
基于收集器的最大容量:5 pF集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP功耗环境最大值:0.8 W
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
VCEsat-Max:0.8 VBase Number Matches:1

2SA1200Y 数据手册

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2SA1200  
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)  
2SA1200  
High Voltage Switching Applications  
Unit: mm  
·
·
·
·
·
High voltage: V  
= −150 V  
CEO  
High transition frequency: f = 120 MHz (typ.)  
T
Small flat package  
P
= 1 to 2 W (mounted on ceramic substrate)  
C
Complementary to 2SC2880  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
150  
150  
5  
V
V
CBO  
CEO  
EBO  
V
I
50  
10  
500  
mA  
mA  
C
Base current  
I
B
P
P
PW-MINI  
JEDEC  
C
C
Collector power dissipation  
mW  
800  
(Note 1)  
JEITA  
SC-62  
2-5K1A  
Junction temperature  
T
150  
°C  
°C  
j
TOSHIBA  
Storage temperature range  
T
55 to 150  
stg  
Weight: 0.05 g (typ.)  
Note 1: 2SA1200 mounted on ceramic substrate (250 mm2 × 0.8 t)  
1
2002-08-19  

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