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2SA1190RF PDF预览

2SA1190RF

更新时间: 2024-11-09 13:04:07
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 180K
描述
100mA, 90V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

2SA1190RF 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.45Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:90 V
配置:SINGLE最小直流电流增益 (hFE):250
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SA1190RF 数据手册

 浏览型号2SA1190RF的Datasheet PDF文件第2页浏览型号2SA1190RF的Datasheet PDF文件第3页浏览型号2SA1190RF的Datasheet PDF文件第4页浏览型号2SA1190RF的Datasheet PDF文件第5页浏览型号2SA1190RF的Datasheet PDF文件第6页浏览型号2SA1190RF的Datasheet PDF文件第7页 
2SA1190  
Silicon PNP Epitaxial  
REJ03G0640-0200  
(Previous ADE-208-1012)  
Rev.2.00  
Aug.10.2005  
Application  
Low frequency low noise amplifier  
Complementary pair with 2SC2855 and 2SC2856  
Outline  
RENESAS Package code: PRSS0003DA-A  
(Package name: TO-92 (1))  
Emitter  
llector  
e  
Absolute Maximum Ratin
(Ta = 25°C)  
Item  
Collector to base voltag
Collector to emitter v
Emitter to base voltage  
Collector current  
l  
BO  
VCEO  
VEBO  
IC  
Rating  
–90  
Unit  
V
–90  
V
–5  
V
–100  
100  
mA  
mA  
mW  
°C  
°C  
Emitter current  
IE  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
Tj  
150  
Tstg  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 6  

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