生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.15 A |
基于收集器的最大容量: | 7 pF | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 0.15 W | 最大功率耗散 (Abs): | 0.15 W |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
VCEsat-Max: | 0.3 V |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1162-GR,LF(B | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
2SA1162GRTE85R | TOSHIBA |
获取价格 |
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Sma | |
2SA1162GT1 | ONSEMI |
获取价格 |
General Purpose Amplifier Transistors | |
2SA1162GT1/D | ETC |
获取价格 |
General Purpose Amplifier Transistors | |
2SA1162-HF_15 | KEXIN |
获取价格 |
PNP Transistors | |
2SA1162O | MCC |
获取价格 |
150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3 | |
2SA1162-O | TOSHIBA |
获取价格 |
TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, | |
2SA1162-O | KEXIN |
获取价格 |
PNP Transistors | |
2SA1162-O | MCC |
获取价格 |
PNP Silicon Plastic-Encapsulate Transistor | |
2SA1162-O(F) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23 |