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2SA1037 PDF预览

2SA1037

更新时间: 2024-10-28 07:07:59
品牌 Logo 应用领域
金誉半导体 - HTSEMI /
页数 文件大小 规格书
2页 316K
描述
∙ Excellent hFE linearity. ∙ Complments the 2SC2412

2SA1037 数据手册

 浏览型号2SA1037的Datasheet PDF文件第2页 
2SA1037  
SOT-23  
TRANSISTOR(PNP)  
FEATURES  
Excellent hFE linearity.  
Complments the 2SC2412  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MARKING : FQ, FR, FS  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
Parameter  
Value  
-60  
Units  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-6  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
mA  
mW  
PC  
200  
TJ  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
-60  
-50  
-6  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=-50μA,IE=0  
V(BR)CEO IC=-1mA,IB=0  
V(BR)EBO IE=-50μA,IC=0  
V
V
ICBO  
IEBO  
hFE  
VCB=-60V,IE=0  
-0.1  
-0.1  
560  
-0.5  
μA  
μA  
Emitter cut-off current  
VEB=-6V,IC=0  
DC current gain  
VCE=-6V,IC=-1mA  
120  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=-50mA,IB=-5mA  
VCE=-12V,IC=-2mA,f=30MHz  
VCB=-12V,IE=0,f=1MHz  
V
140  
4.0  
MHz  
pF  
Collector output capacitance  
Cob  
5.0  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
Range  
120 - 270  
180 - 390  
270 - 560  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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