Datasheet > 2SA1037AK

2SA1037AK

更新时间： 2024-11-17 07:29:27

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	88K
描述
General Purpose Transistor

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中文翻译

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数据手册

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2SA1037AK 数据手册

SMD Type

Transistors

General Purpose Transistor

2SA1037AK

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Excellent hFE linearity.

PNP silicon transistor

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-60

Unit

-50

-6

Collector current

-0.15

0.2

Collector power dissipation

Junction temperature

Storage temperature

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

-60

-50

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IC=-50

IC=-1mA

IE=-50ìA

VCB=-60V

VEB=-6V

-0.1

-0.5

560

5.0

Emitter cutoff current

IEBO

Collector-emitter saturation voltage

DC current Gain

VCE(sat) IC/IB=-50mA/-5mA

hFE

Cob

VCE=-6V, IC=-1mA

120

Output capacitance

VCB=-12V, IE=0A, f=1MHz

VCE=-12V, IE=2mA, f=30MHz

4.0

Transition frequency

140

MHz

hFE Classification

Marking

Rank

hFE

120 270

180 390

270 560

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2SA1037AKLNE	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| SOT-23VAR
2SA1037AKLNR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| SOT-23VAR
2SA1037AKLNS	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 150MA I(C) \| SOT-23VAR
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