Datasheet > 2SA1037AK

2SA1037AK

更新时间： 2024-11-19 07:29:27

品牌	Logo	应用领域
SECOS		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	178K
描述
PNP Silicon General Purpose Transistor

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2SA1037AK 数据手册

2SA1037AK

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

A suffix of "-C" specifies halogen & lead-free

SC-59

Dim

Min

2.70

1.30

1.00

0.35

1.70

0.00

0.10

0.20

1.25

2.25

Max

3.10

1.70

1.30

0.50

2.30

0.10

0.26

0.60

1.65

3.00

FEATURES

Top View

RoHS Compliant Product.

Excellent hFE linearity.

Complments the 2SC2412K.

COLLECTOR

BASE

MARKING : FP, FQ, FR

All Dimension in mm

EMITTER

MAXIMUM RATINGS* T_{A=25 C unless otherwise noted}

Symbol

Parameter

Value

-60

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-6

Collector Current -Continuous

Collector Dissipation

-150

200

℃

P_C

T_J, T_stg

Junction and Storage Temperature

-55~150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-60

-50

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOIc=-50µA, I_E=0

V_(BR)CEOIc=-1uA,I_B=0

V_(BR)EBOI_E=-50µA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=-60V,I_E=0

-0.1

560

-0.5

µA

Emitter cut-off current

V_EB=-6V,I_C=0

DC current gain

V_CE=-6V,I_C=-1mA

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-50mA,I_B=-5mA

V_CE=-12V,I_C=-2mA,f=30MHz

V_CB=-12V,I_E=0,f=1MHz

140

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

120 - 270

180 - 390

270 - 560

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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