Datasheet > 2SA1037_10

2SA1037_10

更新时间： 2022-09-16 16:33:35

品牌	Logo	应用领域
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描述
PNP Silicon General Purpose Transistor

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2SA1037_10 数据手册

2SA1037

-0.15A, -60V

PNP Silicon General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23

ꢀ

Excellent h_FElinearity.

Complements of the 2SC2412

ꢀ

MECHANICAL DATA

Top View

C B

ꢀ

Case: SOT-23, Molded Plastic

Weight: 0.008 grams(approx.)

ꢀ

CLASSIFICATION OF h_FE

2SA1037-Q

120~270

2SA1037-R

2SA1037-S

270~560

Product-Rank

Millimeter

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

Min.

Max.

Range

180~390

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Marking

0.6 REF.

0.89

1.02

PACKAGE INFORMATION

Collector

Package

MPQ

LeaderSize

7’ inch

SOT-23

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_CBO

Ratings

-60

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent

V_CEO

-50

V_EBO

-6

I_C

-150

200

Collector Power Dissipation

Junction & Storage Temperature

P_C

T_J, T_STG

+150, -55 ~ +150

℃

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

-60

I_C=-50μA, I_E=0

-50

I_C=-1μA, I_B=0

-6

I_E=-50μA, I_C=0

V_CB=-60V, I_E=0

V_EB= -6V, I_C=0

I_C=-50mA, I_B=-5mA

V_CE=-6V,I_C=-1mA

-0.1

-0.5

560

μA

Emitter cut-off current

I_EBO

Collector-emitter saturation voltage

DC current gain

V_CE(sat)

h_FE

120

Transition frequency

f_T

140

4.0

MHz

V_CE=-12V, I_E=-2mA, f=30MHz

V_CB=-12V, I_E=0, f=1MHz

Collector output capacitance

C_ob

5.0

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2010 Rev. C

Page 1 of 2

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