5秒后页面跳转
2SA1037_10 PDF预览

2SA1037_10

更新时间: 2024-11-17 07:29:27
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 371K
描述
PNP Silicon General Purpose Transistor

2SA1037_10 数据手册

 浏览型号2SA1037_10的Datasheet PDF文件第2页 
2SA1037  
-0.15A, -60V  
PNP Silicon General Purpose Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen and lead free  
FEATURES  
SOT-23  
Excellent hFE linearity.  
Complements of the 2SC2412  
A
L
3
3
MECHANICAL DATA  
Top View  
C B  
1
Case: SOT-23, Molded Plastic  
Weight: 0.008 grams(approx.)  
1
2
2
K
F
E
D
H
J
CLASSIFICATION OF hFE  
G
2SA1037-Q  
120~270  
FQ  
2SA1037-R  
2SA1037-S  
270~560  
FS  
Product-Rank  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
3.04  
2.55  
1.40  
1.15  
2.04  
0.50  
Min.  
Max.  
Range  
180~390  
FR  
A
B
C
D
E
F
2.80  
2.10  
1.20  
0.89  
1.78  
0.30  
G
H
J
K
L
0.09  
0.45  
0.08  
0.18  
0.60  
0.177  
Marking  
0.6 REF.  
0.89  
1.02  
PACKAGE INFORMATION  
Collector  
Package  
MPQ  
3K  
LeaderSize  
7’ inch  
3
SOT-23  
1
Base  
2
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
Ratings  
-60  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Currrent  
VCEO  
-50  
V
VEBO  
-6  
V
mA  
IC  
-150  
200  
Collector Power Dissipation  
Junction & Storage Temperature  
PC  
mW  
TJ, TSTG  
+150, -55 ~ +150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
Typ.  
Max.  
Unit  
V
Test Conditions  
-60  
-
-
IC=-50μA, IE=0  
-50  
-
-
V
IC=-1μA, IB=0  
-6  
-
-
V
IE=-50μA, IC=0  
VCB=-60V, IE=0  
VEB= -6V, IC=0  
IC=-50mA, IB=-5mA  
VCE=-6V,IC=-1mA  
-
-
-
-0.1  
-0.1  
-0.5  
560  
-
μA  
μA  
V
Emitter cut-off current  
IEBO  
-
Collector-emitter saturation voltage  
DC current gain  
VCE(sat)  
hFE  
-
-
120  
-
Transition frequency  
fT  
-
-
140  
4.0  
MHz  
pF  
VCE=-12V, IE=-2mA, f=30MHz  
VCB=-12V, IE=0, f=1MHz  
Collector output capacitance  
Cob  
5.0  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
31-Dec-2010 Rev. C  
Page 1 of 2  

与2SA1037_10相关器件

型号 品牌 获取价格 描述 数据表
2SA1037_15 KEXIN

获取价格

PNP Transistors
2SA1037-3L BL Galaxy Electrical

获取价格

50V,0.15A,General Purpose PNP Bipolar Transistor
2SA1037AK KEXIN

获取价格

General Purpose Transistor
2SA1037AK SECOS

获取价格

PNP Silicon General Purpose Transistor
2SA1037AK ROHM

获取价格

General Purpose Transistor
2SA1037AK LRC

获取价格

General Purpose Transistors(PNP Silicon)
2SA1037AK FOSHAN

获取价格

SOT-23
2SA1037AK_07 WEITRON

获取价格

PNP General Purpose Transistors
2SA1037AK_09 ROHM

获取价格

General Purpose Transistor (50V, 0.15A)
2SA1037AK_1 ROHM

获取价格

General Purpose Transistor