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2SA1008-M-AZ PDF预览

2SA1008-M-AZ

更新时间: 2024-11-08 08:39:03
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
6页 109K
描述
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, MP-25, 3 PIN

2SA1008-M-AZ 数据手册

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DATA SHEET  
SILICON POWER TRANSISTOR  
2SA1008  
PNP SILICON EPITAXIAL TRANSISTOR  
FOR HIGH-SPEED SWITCHING  
ORDERING INFORMATION  
The 2SA1008 is a mold power transistor developed for high-speed  
switching, and is ideal for use as a driver in devices such as switching  
regulators, DC/DC converters, and high-frequency power amplifiers.  
Part No.  
2SA1008  
Package  
TO-220AB  
FEATURES  
(TO-220AB)  
• Low collector saturation voltage  
• Fast switching speed  
• Complementary transistor: 2SC2331  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
VCBO  
Conditions  
Ratings  
100  
100  
7.0  
2.0  
4.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
VCEO  
V
VEBO  
V
IC(DC)  
A
PW 300 µs,  
IC(pulse)  
A
duty cycle 10%  
1.0  
15  
Base current (DC)  
IB(DC)  
PT  
A
TC = 25°C  
TA = 25°C  
Total power dissipation  
W
W
°C  
°C  
1.5  
Junction temperature  
Storage temperature  
Tj  
150  
55 to +150  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14866EJ2V0DS00 (2nd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

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