Datasheet > 2PB1219AR

2PB1219AR

更新时间： 2024-11-27 06:23:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	49K
描述
PNP General Purpose Transistor

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中文翻译

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数据手册

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2PB1219AR 数据手册

SMD Type

TransistIoCrs

PNP General Purpose Transistor

2PB1219A

Features

High current (max. 500 mA)

Low voltage (max. 50 V)

Low collector-emitter saturation voltage (max. 600 mV).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-60

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

-50

-5

Collector current

-500

Peak collector current

I^CM

-1

Peak base current

I^BM

-200

Total power dissipation

Storage temperature

P^tot

200

T^stg

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Tamb

Rth j-a

-65 to +150

625

K/W

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