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2PB1219AT/R PDF预览

2PB1219AT/R

更新时间: 2024-01-23 13:17:02
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
8页 46K
描述
TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

2PB1219AT/R 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.47最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):85JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2PB1219AT/R 数据手册

 浏览型号2PB1219AT/R的Datasheet PDF文件第2页浏览型号2PB1219AT/R的Datasheet PDF文件第3页浏览型号2PB1219AT/R的Datasheet PDF文件第4页浏览型号2PB1219AT/R的Datasheet PDF文件第5页浏览型号2PB1219AT/R的Datasheet PDF文件第6页浏览型号2PB1219AT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
handbook, halfpage  
2PB1219A  
PNP general purpose transistor  
1999 Apr 12  
Product specification  
Supersedes data of 1997 Mar 25  

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