是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
其他特性: | RADIATION HARDENED | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 17 A | 最大漏极电流 (ID): | 17 A |
最大漏源导通电阻: | 0.145 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-257AA | JESD-30 代码: | R-MSFM-P3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 51 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7284D | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | TO-257AA |
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2N7284D1 | RENESAS |
获取价格 |
17A, 100V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7284H | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | TO-257AA |
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2N7284H1 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 100V, 0.145ohm, 1-Element, N-Channel, Silicon, Me |
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2N7284H3 | RENESAS |
获取价格 |
17A, 100V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7284R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 17A I(D) | TO-257AA |
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2N7284R1 | RENESAS |
获取价格 |
17A, 100V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
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2N7284R3 | RENESAS |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 100V, 0.145ohm, 1-Element, N-Channel, Silicon, Me |
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2N7285 | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7285D | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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