生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | RADIATION HARDENED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.24 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-204AA |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 125 W |
最大脉冲漏极电流 (IDM): | 48 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 428 ns | 最大开启时间(吨): | 316 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7285D | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7285D1 | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7285D2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-204AA |
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2N7285D3 | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7285D4 | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7285H | RENESAS |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Met |
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2N7285H1 | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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2N7285H2 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-204AA |
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2N7285H3 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-204AA |
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2N7285H4 | RENESAS |
获取价格 |
16A, 200V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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