是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.4 |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-18 |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.4 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7172-6L | BL Galaxy Electrical |
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N:0.43A, 60V, 1W,P:-0.35A,-60V,1W N+P Channel | |
2N7172DW | BL Galaxy Electrical |
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N:0.3A, 60V, 0.2W,P:-0.2A,-60V,0.2W N+P Chann | |
2N717LEADFREE | CENTRAL |
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Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N718 | MICRO-ELECTRONICS |
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NPN SILICON TRANSISTOR | |
2N718 | NJSEMI |
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NPN TRANSISTOR SILICON | |
2N718A | BOCA |
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GENERAL PURPOSE TRANSISTOR (NPN SILICON) | |
2N718A | CENTRAL |
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Small Signal Transistors | |
2N718A | MICROSEMI |
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NPN LOW POWER SILICON TRANSISTOR | |
2N718A | FAIRCHILD |
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NPN Small Signal General Purpose Amplifiers | |
2N718AE3 | MICROSEMI |
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Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-206A |