2N7002F

更新时间： 2024-01-22 08:42:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	127K
描述
TrenchMOS Logic Level FET

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技术参数
数据手册

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2N7002F 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002F 数据手册

2N7002F

TrenchMOS™ Logic Level FET

Philips Semiconductors

5. Quick reference data

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

V_DS

I_D

drain-source voltage (DC)

T_j= 25 to 150 °C

T_sp= 25 °C; V_GS= 10 V

T_sp= 25 °C

drain current (DC)

475

0.83

150

P_tot

T_j

total power dissipation

junction temperature

°C

Ω

R_DSon

drain-source on-state resistance

V_GS= 10 V; I_D= 500 mA; T_j= 25

V_GS= 4.5 V; I_D= 75 mA; T_j= 25

1.7

2.25

Ω

6. Limiting values

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

V_DS

V_DGR

V_GS

V_GSM

I_D

drain-source voltage (DC)

T_j= 25 to 150 °C

drain-gate voltage (DC)

gate-source voltage (DC)

peak gate-source voltage

drain current (DC)

T_j= 25 to 150 °C; R_GS= 20 kΩ

±30

±40

475

300

1.9

t_p≤ 50 µs; pulsed; duty cycle = 25%

T_sp= 25 °C; V_GS= 10 V; Figure 2 and 3

T_sp= 100 °C; V_GS= 10 V; Figure 2

T_sp= 25 °C; pulsed; t_p≤ 10 µs; Figure 3

T_sp= 25 °C; Figure 1

I_DM

P_tot

T_stg

T_j

peak drain current

total power dissipation

storage temperature

0.83

+150

−65

°C

operating junction temperature

Source-drain diode

I_S

source (diode forward) current (DC) T_sp= 25 °C

475

1.9

I_SM

peak source (diode forward) current T_sp= 25 °C; pulsed; t_p≤ 10 µs

9397 750 09096

Product data

Rev. 01 — 11 February 2002

2 of 11

123 4 5 6 7...11

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