2N7002

更新时间： 2024-02-19 05:09:17

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	58K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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技术参数
数据手册

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2N7002 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002 数据手册

2N7002

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low On-Resistance: R_DS(ON)

SOT-23

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Dim

Min

0.37

1.19

2.10

0.89

0.±5

1.78

2.65

0.013

0.89

0.±5

0.076

Max

0.51

1.±0

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

Low Input/Output Leakage

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking: K72, K7A

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

V_DGR

Value

Units

Drain-Source Voltage

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±20

±±0

V_GSS

115

800

Drain Current (Note 1)

Continuous

Continuous @ 100°C

Pulsed

I_D

Total Power Dissipation (Note 1)

Derating above T_A= 25°C

200

1.60

mW/°C

P_d

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

°C/W

°C

T_j, T_STG

-55 to +150

Note: 1. Valid provided that terminals are kept at specified ambient temperature.

2. Short duration test pulse used to minimize self-heating effect.

DS11303 Rev. K-2

1 of 3

2N7002

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