生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | Is Samacsys: | N |
其他特性: | RADIATION HARDENED | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 1.16 A | 最大漏源导通电阻: | 3.65 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 30 pF |
JEDEC-95代码: | TO-205AF | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 参考标准: | MILITARY STANDARD (USA) |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6896 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-204AA | |
2N6896TX | RENESAS |
获取价格 |
6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | |
2N6897 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA | |
2N6898 | NJSEMI |
获取价格 |
POWER MOS FIELD-EFFECT TRANSISTORS | |
2N689A | CENTRAL |
获取价格 |
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS | |
2N689A | NJSEMI |
获取价格 |
Thyristor SCR 500V 200A 3-Pin TO-48 Box | |
2N689ALEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 25A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-48, TO- | |
2N689APBFREE | CENTRAL |
获取价格 |
暂无描述 | |
2N689E3 | MICROSEMI |
获取价格 |
Silicon Controlled Rectifier, 16000mA I(T), 500V V(DRM) | |
2N689LEADFREE | CENTRAL |
获取价格 |
Silicon Controlled Rectifier, 25A I(T)RMS, 500V V(DRM), 500V V(RRM), 1 Element, TO-48, TO- |