2N6667AJ

更新时间： 2024-02-18 23:09:27

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
8页	77K
描述
10A, 60V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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技术参数
数据手册

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2N6667AJ 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.72	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	10 A	集电极-发射极最大电压：	60 V
配置：	DARLINGTON	最小直流电流增益 (hFE)：	1000
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	PNP
功耗环境最大值：	65 W	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	20 MHz
Base Number Matches：	1

2N6667AJ 数据手册

2N6667 2N6668

= 30 V

I /I = 250

C B

= I

B1 B2

= 25°C

0.7

0.5

0.3

0.2

0.1

0.2 0.3

0.5 0.7

100

120

140 160

I , COLLECTOR CURRENT (AMPS)

T, TEMPERATURE (°C)

Figure 4. Typical Switching Times

Figure 3. Power Derating

D = 0.5

0.5

0.3

0.2

0.1

(pk)

0.1

(t) = r(t) R

θJC

= 1.92°C/W MAX

0.05

0.02

0.05

0.03

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

SINGLE PULSE

0.02

0.01

0.02

- T = P

(t)

J(pk)

(pk) θJC

DUTY CYCLE, D = t /t

1 2

0.01

0.05

0.1

0.2

0.5

100

200

500

1000

t, TIME (ms)

Figure 5. Thermal Response

100 µs

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

5 ms

breakdown. Safe operating area curves indicate I – V

1 ms

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

0.5

= 150°C

The data of Figure 6 is based on T

variable depending on conditions. Second breakdown pulse

= 150_C; T is

J(pk)

0.3

0.2

2N6667

2N6668

BONDING WIRE LIMIT

THERMAL LIMIT @ T = 25°C

0.1

limits are valid for duty cycles to 10% provided T

J(pk)

SECOND BREAKDOWN LIMIT

< 150_C. T

may be calculated from the data in Figure 5.

J(pk)

0.05

CURVES APPLY BELOW RATED V

CEO

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

0.03

0.02

20 30

50 70 100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Maximum Safe Operating Area

http://onsemi.com

1 234 5 6 7 8

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