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2N6497/D PDF预览

2N6497/D

更新时间: 2024-11-03 23:19:51
品牌 Logo 应用领域
其他 - ETC 晶体晶体管高压
页数 文件大小 规格书
8页 63K
描述
High Voltage NPN Silicon Power Transistors

2N6497/D 数据手册

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ON Semiconductort  
High Voltage NPN Silicon  
Power Transistors  
2N6497  
. . . designed for high voltage inverters, switching regulators and  
line–operated amplifier applications. Especially well suited for  
switching power supply applications.  
5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
250 VOLT  
High Collector–Emitter Sustaining Voltage –  
V
= 250 Vdc (Min)  
80 WATTS  
CEO(sus)  
Excellent DC Current Gain  
= 10–75 @ I = 2.5 Adc  
h
FE  
C
Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc –  
C
V
CE(sat)  
= 1.0 Vdc (Max)  
MAXIMUM RATINGS (1)  
Rating  
Symbol  
Value  
250  
350  
6.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current – Continuous  
V
CEO  
V
CB  
EB  
V
CASE 221A–09  
TO–220AB  
I
C
5.0  
10  
Peak  
Base Current  
I
B
2.0  
Adc  
Total Power Dissipation @ T = 25_C  
P
80  
0.64  
Watts  
W/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T ,T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
1.56  
_C/W  
θ
JC  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 10  
2N6497/D  

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