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2N6497BDBD PDF预览

2N6497BDBD

更新时间: 2023-02-26 12:50:08
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
61页 366K
描述
5A, 250V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6497BDBD 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
*Motorola Preferred Device  
5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
. . . designed for high voltage inverters, switching regulators and line–operated  
amplifier applications. Especially well suited for switching power supply applications.  
High Collector–Emitter Sustaining Voltage —  
250 & 300 VOLTS  
80 WATTS  
V
V
= 250 Vdc (Min) — 2N6497  
= 300 Vdc (Min) — 2N6498  
CEO(sus)  
CEO(sus)  
Excellent DC Current Gain  
h
= 1075 @ I = 2.5 Adc  
FE  
Low Collector–Emitter Saturation Voltage @ I = 2.5 Adc —  
C
C
V
V
= 1.0 Vdc (Max) — 2N6497  
= 1.25 Vdc (Max) — 2N6498  
CE(sat)  
CE(sat)  
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS (1)  
Rating  
Symbol  
2N6497  
250  
2N6498  
300  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
350  
400  
CB  
EB  
V
6.0  
6.0  
Collector Current — Continuous  
— Peak  
I
C
5.0  
10  
5.0  
10  
Base Current  
I
B
2.0  
2.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
80  
0.64  
80  
0.64  
Watts  
W/ C  
Operating and Storage Junction Temperature Range  
T ,T  
J stg  
65 to +150  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
(1) Indicates JEDEC Registered Data.  
R
1.56  
C/W  
θJC  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
3–136  
Motorola Bipolar Power Transistor Device Data  

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