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2N6487 PDF预览

2N6487

更新时间: 2024-11-07 12:54:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管局域网
页数 文件大小 规格书
4页 54K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

2N6487 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:7.89最大集电极电流 (IC):15 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):5JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:75 W最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):5 MHz
VCEsat-Max:3.5 V

2N6487 数据手册

 浏览型号2N6487的Datasheet PDF文件第2页浏览型号2N6487的Datasheet PDF文件第3页浏览型号2N6487的Datasheet PDF文件第4页 
2N6487  
2N6488/2N6490  
®
COMPLEMENTARY SILICON POWER TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
DESCRIPTION  
The 2N6487 and 2N6488 are silicon  
epitaxial-base NPN transistors in Jedec TO-220  
plastic package.  
They are inteded for use in power linear and low  
frequency switching applications.  
3
2
1
The 2N6487 complementary type is 2N6490.  
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
2N6487  
2N6490  
70  
2N6488  
VCBO  
VCEX  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
90  
90  
80  
V
V
70  
Collector-Emitter Voltage (VBE=-1.5V,RBE=100)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
V
5
V
15  
A
IB  
Base Current  
5
75  
A
o
Ptot  
Tstg  
Tj  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
April 1999  

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