Datasheet > 2N6427_01

2N6427_01

更新时间： 2024-09-30 03:56:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
10页	471K
描述
NPN Darlington Transistor

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2N6427_01 数据手册

2N6427

MMBT6427

TO-92

SOT-23

Mark: 1V

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 1.0 A. Sourced from

Process 05. See MPSA14 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N6427

*MMBT6427

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...10

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