Datasheet > 2N6427_D81Z

2N6427_D81Z

更新时间： 2024-02-23 07:25:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	706K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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2N6427_D81Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.92
最大集电极电流 (IC)：	0.5 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	14000	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.625 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	130 MHz	Base Number Matches：	1

2N6427_D81Z 数据手册

2N6427

MMBT6427

TO-92

SOT-23

Mark: 1V

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 1.0 A. Sourced from

Process 05. See MPSA14 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N6427

*MMBT6427

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...10

中文翻译

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