Datasheet > 2N6402

2N6402

更新时间： 2024-09-13 20:19:55

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2N6402 数据手册

2N6400-2N6405

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage ⁽¹⁾

(T_J= -40 to 125°C, sine wave 50 to 60Hz, gate open)

2N6400

2N6401

2N6402

2N6403

2N6404

2N6405

V_DRM

V_RRM

100

200

400

600

800

Volts

On-state RMS current

I_T(RMS)

Amps

(180° conduction angles), T_C= 100°C)

Average on-state current

I_T(AV)

(180° conduction angles, T_C= 100°C)

Peak non-repetitive surge current

I_TSM

I²t

Amps

A²s

(1/2 cycle, sine wave 60Hz, T_J= 90°C)

160

145

Circuit fusing (t = 8.3ms)

Forward peak gate power

P_GM

Watts

≤ 1.0µs, T

(pulse width

_C= 100°C)

Forward average gate power

P_G(AV)

Watts

Amps

(t = 8.3ms, T_C= 100°C)

0.5

Forward peak gate current

I_GM

≤ 1.0µs, T

(Pulse width

_C= 100°C)

2.0

Operating junction temperature range

T_J

-40 to 125

°C

Storage temperature range

T_stg

-40 to 150

V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on

the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

R_ӨJC

Max

1.5

Unit

°C/W

°C

Thermal resistance, junction to case

Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds

T_L

260

ELECTRICAL CHARACTERISTICS (T_C= 25°C)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak repetitive forward or reverse blocking current

(V_AK= rated V_DRMor V_RRM, gate open)

T_J= 25°C

µA

I_DRM, I_RRM

T_J= 125°C

2.0

ON CHARACTERISTICS

Peak forward on-state voltage

V_TM

Volts

(I_TM= 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)

1.7

Rev. 20120924

12 3 4 5 6

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与2N6402相关器件

型号	品牌	获取价格	描述	数据表
2N6402-16	MOTOROLA	获取价格	16A, 200V, SCR, TO-220AB, TO-220, 2 PIN
2N6402-A16A	MOTOROLA	获取价格	16A, 200V, SCR, TO-220AB, TO-220, 3 PIN
2N6402-AC	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB
2N6402-AD	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB
2N6402-AF	MOTOROLA	获取价格	16A, 200V, SCR, TO-220AB
2N6402-AJ	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB
2N6402-AS	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB
2N6402-AU	MOTOROLA	获取价格	16A, 200V, SCR, TO-220AB
2N6402-BC	MOTOROLA	获取价格	16A, 200V, SCR, TO-220AB
2N6402-BG	MOTOROLA	获取价格	Silicon Controlled Rectifier, 16A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB