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2N6288AU PDF预览

2N6288AU

更新时间: 2024-11-05 04:10:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
60页 371K
描述
7A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

2N6288AU 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in general–purpose amplifier and switching applications.  
DC Current Gain Specified to 7.0 Amperes  
h
h
= 30–150 @ I = 3.0 Adc — 2N6111, 2N6288  
FE  
FE  
C
= 2.3 (Min) @ I = 7.0 Adc — All Devices  
C
Collector–Emitter Sustaining Voltage —  
V
V
V
= 30 Vdc (Min) — 2N6111, 2N6288  
= 50 Vdc (Min) — 2N6109  
= 70 Vdc (Min) — 2N6107, 2N6292  
CEO(sus)  
CEO(sus)  
CEO(sus)  
High Current Gain — Bandwidth Product  
f
f
= 4.0 MHz (Min) @ I = 500 mAdc — 2N6288, 90, 92  
T
T
C
= 10 MHz (Min) @ I = 500 mAdc — 2N6107, 09, 11  
C
*Motorola Preferred Device  
TO–220AB Compact Package  
7 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
*MAXIMUM RATINGS  
2N6111  
2N6288  
2N6107  
2N6292  
Rating  
Symbol  
2N6109  
Unit  
305070 VOLTS  
40 WATTS  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
30  
40  
50  
60  
70  
80  
Vdc  
Vdc  
Vdc  
Adc  
CEO  
V
CB  
EB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
7.0  
10  
Base Current  
I
B
3.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
40  
0.32  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
CASE 221A–06  
TO–220AB  
Thermal Resistance, Junction to Case  
* Indicates JEDEC Registered Data.  
R
3.125  
C/W  
θJC  
40  
30  
20  
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T , CASE TEMPERATURE (°C)  
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
3–101  
Motorola Bipolar Power Transistor Device Data  

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