SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general–purpose amplifier and switching applications.
•
DC Current Gain Specified to 7.0 Amperes
h
h
= 30–150 @ I = 3.0 Adc — 2N6111, 2N6288
FE
FE
C
= 2.3 (Min) @ I = 7.0 Adc — All Devices
C
•
Collector–Emitter Sustaining Voltage —
V
V
V
= 30 Vdc (Min) — 2N6111, 2N6288
= 50 Vdc (Min) — 2N6109
= 70 Vdc (Min) — 2N6107, 2N6292
CEO(sus)
CEO(sus)
CEO(sus)
•
•
High Current Gain — Bandwidth Product
f
f
= 4.0 MHz (Min) @ I = 500 mAdc — 2N6288, 90, 92
T
T
C
= 10 MHz (Min) @ I = 500 mAdc — 2N6107, 09, 11
C
*Motorola Preferred Device
TO–220AB Compact Package
7 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
*MAXIMUM RATINGS
2N6111
2N6288
2N6107
2N6292
Rating
Symbol
2N6109
Unit
30–50–70 VOLTS
40 WATTS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
30
40
50
60
70
80
Vdc
Vdc
Vdc
Adc
CEO
V
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
7.0
10
Base Current
I
B
3.0
Adc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
40
0.32
Watts
W/ C
Operating and Storage Junction
Temperature Range
T , T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
CASE 221A–06
TO–220AB
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
R
3.125
C/W
θJC
40
30
20
10
0
0
20
40
60
80
100
120
140
160
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
3–101
Motorola Bipolar Power Transistor Device Data