生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.69 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 7 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6288U2 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2N6288UA | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2N6288W | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2N6289 | NJSEMI |
获取价格 |
MAXIMUM RATINGS, ABSOLUTE-MAXIMUM VALUOS | |
2N6289 | BOCA |
获取价格 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS | |
2N629 | NJSEMI |
获取价格 |
GE PNP POWER BJT | |
2N6290 | CENTRAL |
获取价格 |
NPN SILICON TRANSISTOR | |
2N6290 | NJSEMI |
获取价格 |
SI NPN POWER BJT | |
2N6290 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N6290 | RECTRON |
获取价格 |
TO-220 - Power Transistors and Darlingtons |