5秒后页面跳转
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2N6288-DR6260 | RENESAS |
获取价格 |
7A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| 2N6288-DR6269 | RENESAS |
获取价格 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |
|
| 2N6288-DR6280 | RENESAS |
获取价格 |
7A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| 2N6288DW | ONSEMI |
获取价格 |
7A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN |
|
| 2N6288G | ONSEMI |
获取价格 |
7 AMPERE POWER TRANSISTORS COMPLEMENTARY SILI |
|
| 2N6288L | MOTOROLA |
获取价格 |
7A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| 2N6288N | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |
|
| 2N6288S | MOTOROLA |
获取价格 |
7 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| 2N6288T | MOTOROLA |
获取价格 |
7A, 30V, NPN, Si, POWER TRANSISTOR, TO-220AB |
|
| 2N6288U | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
工作时间：9:00-21:00
CEO邮箱：ceo@jiepei.com
投诉邮箱：tousu@jiepei.com
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
