5秒后页面跳转
2N6261 PDF预览

2N6261

更新时间: 2024-01-03 15:42:48
品牌 Logo 应用领域
SEME-LAB 晶体晶体管
页数 文件大小 规格书
2页 22K
描述
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR

2N6261 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-66
包装说明:TO-66, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-66
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):0.8 MHzBase Number Matches:1

2N6261 数据手册

 浏览型号2N6261的Datasheet PDF文件第2页 
2N6261  
MECHANICAL DATA  
Dimensions in mm(inches)  
HOMETAXIAL-BASE  
MEDIUM POWER SILICON  
NPN TRANSISTOR  
6.35 (0.250)  
8.64 (0.340)  
3.68  
(0.145) rad.  
max.  
3.61 (0.142)  
3.86 (0.145)  
rad.  
FEATURES  
• f = 800 kHz at 0.2A  
T
• Maximum Safe-area of operation curves  
for dc and pulse operation.  
• V  
= 90V min  
CEV(sus)  
• Low Saturation Voltage:  
V
I
CE(sat = 1.0V at C = 0.5A)  
1.27 (0.050)  
1.91 (0.750)  
4.83 (0.190)  
5.33 (0.210)  
9.14 (0.360)  
min.  
APPLICATIONS  
TO–66  
• Power Switching Circuits  
PIN 1 — Base  
PIN 2 — Emitter  
Case is Collector.  
• Series and shunt-regulator driver and  
output stages  
• High-fidelity amplifers  
• Solenoid Drivers  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)  
V
V
V
V
V
Collector – Base Voltage  
90V  
80V  
CBO  
Collector – Emitter Voltage (with base open)  
CEO  
External Base – Emitter (R ) = 100 )  
BE  
Collector – Emitter Voltage (with base reverse biased)  
85V  
CER(sus)  
CEV(sus)  
EBO  
90V  
Emitter to Base Voltage  
7V  
IC  
Continuous Collector Current  
4A  
I
Continuous Base Current  
2A  
B
P
Total Power Dissipation at T  
case  
= 25°C  
50W  
D
Derate above 25°C  
0.200°C  
–65 to 200°C  
T T  
,
stg  
Operating and Storage Junction Temperature Range  
j
,
In accordance with JEDEC registration data format  
THERMAL CHARACTERISTICS  
R JC  
Thermal Resistance, Junction to Case  
3.5 °C/W  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
7/00  

与2N6261相关器件

型号 品牌 获取价格 描述 数据表
2N6261LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
2N6262 SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.(150V, 10A)
2N6262 SAVANTIC

获取价格

Silicon NPN Power Transistors
2N6262 ISC

获取价格

Silicon NPN Power Transistors
2N6262 MICROSEMI

获取价格

Power Bipolar Transistor, 10A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6263 NJSEMI

获取价格

ELECTRICAL CHARACTERISTICS
2N6263 ISC

获取价格

Silicon NPN Power Transistors
2N6263 SAVANTIC

获取价格

Silicon NPN Power Transistors
2N6263 SEME-LAB

获取价格

Bipolar NPN Device
2N6263 CENTRAL

获取价格

Power Transistors