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2N6027/D PDF预览

2N6027/D

更新时间: 2024-11-24 23:19:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管可编程单结晶体管
页数 文件大小 规格书
8页 152K
描述
Programmable Unijunction Transistor

2N6027/D 数据手册

 浏览型号2N6027/D的Datasheet PDF文件第2页浏览型号2N6027/D的Datasheet PDF文件第3页浏览型号2N6027/D的Datasheet PDF文件第4页浏览型号2N6027/D的Datasheet PDF文件第5页浏览型号2N6027/D的Datasheet PDF文件第6页浏览型号2N6027/D的Datasheet PDF文件第7页 
Preferred Device  
Programmable Unijunction  
Transistor Triggers  
Designed to enable the engineer to “program’’ unijunction  
http://onsemi.com  
characteristics such as R , η, I , and I by merely selecting two  
BB  
V
P
resistor values. Application includes thyristor–trigger, oscillator, pulse  
and timing circuits. These devices may also be used in special thyristor  
applications due to the availability of an anode gate. Supplied in an  
inexpensive TO–92 plastic package for high–volume requirements,  
this package is readily adaptable for use in automatic insertion  
equipment.  
PUTs  
40 VOLTS  
300 mW  
Programmable — R , η, I and I  
BB  
V
P
G
Low On–State Voltage — 1.5 Volts Maximum @ I = 50 mA  
A
F
K
Low Gate to Anode Leakage Current — 10 nA Maximum  
High Peak Output Voltage — 11 Volts Typical  
Low Offset Voltage — 0.35 Volt Typical (R = 10 k ohms)  
G
Device Marking: Logo, Device Type, e.g., 2N6027, Date Code  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
1
2
3
*Power Dissipation  
Derate Above 25°C  
P
1/θ  
300  
4.0  
mW  
mW/°C  
F
JA  
*DC Forward Anode Current  
Derate Above 25°C  
I
T
150  
2.67  
mA  
mA/°C  
TO–92 (TO–226AA)  
CASE 029  
STYLE 16  
*DC Gate Current  
I
G
50  
mA  
Repetitive Peak Forward Current  
100 µs Pulse Width, 1% Duty Cycle  
*20 µs Pulse Width, 1% Duty Cycle  
I
Amps  
TRM  
PIN ASSIGNMENT  
Anode  
1.0  
2.0  
1
2
3
Gate  
Non–Repetitive Peak Forward Current  
10 µs Pulse Width  
I
5.0  
Amps  
TSM  
Cathode  
*Gate to Cathode Forward Voltage  
*Gate to Cathode Reverse Voltage  
*Gate to Anode Reverse Voltage  
V
40  
5.0  
40  
40  
Volts  
Volts  
Volts  
Volts  
°C  
GKF  
GKR  
GAR  
V
V
ORDERING INFORMATION  
Seedetailedorderingandshippinginformationinthepackage  
dimensions section on page 7 of this data sheet.  
(1)  
*Anode to Cathode Voltage  
V
AK  
Operating Junction Temperature Range  
T
J
–50 to  
+100  
Preferred devices are recommended choices for future use  
and best overall value.  
*Storage Temperature Range  
T
stg  
–55 to  
+150  
°C  
*Indicates JEDEC Registered Data  
(1) Anode positive, R  
= 1000 ohms  
GA  
Anode negative, R  
= open  
GA  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 2  
2N6027/D  

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