Datasheet > 2N6027RL1

2N6027RL1

更新时间： 2024-11-25 02:57:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管可编程单结晶体管
页数	文件大小	规格书
8页	152K
描述
Programmable Unijunction Transistor

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2N6027RL1 数据手册

Preferred Device

Programmable Unijunction

Transistor Triggers

Designed to enable the engineer to “program’’ unijunction

http://onsemi.com

characteristics such as R , η, I , and I by merely selecting two

resistor values. Application includes thyristor–trigger, oscillator, pulse

and timing circuits. These devices may also be used in special thyristor

applications due to the availability of an anode gate. Supplied in an

inexpensive TO–92 plastic package for high–volume requirements,

this package is readily adaptable for use in automatic insertion

equipment.

PUTs

40 VOLTS

300 mW

• Programmable — R , η, I and I

• Low On–State Voltage — 1.5 Volts Maximum @ I = 50 mA

• Low Gate to Anode Leakage Current — 10 nA Maximum

• High Peak Output Voltage — 11 Volts Typical

• Low Offset Voltage — 0.35 Volt Typical (R = 10 k ohms)

• Device Marking: Logo, Device Type, e.g., 2N6027, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

*Power Dissipation

Derate Above 25°C

1/θ

300

4.0

mW/°C

*DC Forward Anode Current

Derate Above 25°C

150

2.67

mA/°C

TO–92 (TO–226AA)

CASE 029

STYLE 16

*DC Gate Current

Repetitive Peak Forward Current

100 µs Pulse Width, 1% Duty Cycle

*20 µs Pulse Width, 1% Duty Cycle

Amps

TRM

PIN ASSIGNMENT

Anode

1.0

2.0

Gate

Non–Repetitive Peak Forward Current

10 µs Pulse Width

5.0

Amps

TSM

Cathode

*Gate to Cathode Forward Voltage

*Gate to Cathode Reverse Voltage

*Gate to Anode Reverse Voltage

5.0

Volts

°C

GKF

GKR

GAR

ORDERING INFORMATION

Seedetailedorderingandshippinginformationinthepackage

dimensions section on page 7 of this data sheet.

(1)

*Anode to Cathode Voltage

Operating Junction Temperature Range

–50 to

+100

Preferred devices are recommended choices for future use

and best overall value.

*Storage Temperature Range

stg

–55 to

+150

°C

*Indicates JEDEC Registered Data

(1) Anode positive, R

= 1000 ohms

Anode negative, R

= open

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 2

2N6027/D

12 3 4 5 6 7 8

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2N6027RL1 替代型号

型号	品牌	替代类型	描述	数据表
2N6027RLRAG	ONSEMI	完全替代	Programmable Unijunction Transistor
2N6027RL1G	ONSEMI	完全替代	Programmable Unijunction Transistor
2N6027G	ONSEMI	完全替代	Programmable Unijunction Transistor

与2N6027RL1相关器件

型号	品牌	获取价格	描述	数据表
2N6027RL1G	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6027RLRA	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6027RLRAG	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6027RLRM	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6027RLRP	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6027TRC	CENTRAL	获取价格	Programmable UJT, TO-92,
2N6027TRD	CENTRAL	获取价格	Programmable UJT, TO-92,
2N6027TRE	CENTRAL	获取价格	Programmable UJT, TO-92,
2N6027TRELEADFREE	CENTRAL	获取价格	Programmable UJT, TO-92,
2N6027TRG	CENTRAL	获取价格	Programmable UJT, TO-92,

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