2N6028G

更新时间： 2024-02-02 10:00:49

品牌	Logo	应用领域
安森美 - ONSEMI		晶体触发装置晶体管可编程单结晶体管
页数	文件大小	规格书
8页	152K
描述
Programmable Unijunction Transistor

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中文翻译

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技术参数
数据手册
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2N6028G 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
触发设备类型：	PROGRAMMABLE UJT	Base Number Matches：	1

2N6028G 数据手册

Preferred Device

Programmable Unijunction

Transistor Triggers

Designed to enable the engineer to “program’’ unijunction

http://onsemi.com

characteristics such as R , η, I , and I by merely selecting two

resistor values. Application includes thyristor–trigger, oscillator, pulse

and timing circuits. These devices may also be used in special thyristor

applications due to the availability of an anode gate. Supplied in an

inexpensive TO–92 plastic package for high–volume requirements,

this package is readily adaptable for use in automatic insertion

equipment.

PUTs

40 VOLTS

300 mW

• Programmable — R , η, I and I

• Low On–State Voltage — 1.5 Volts Maximum @ I = 50 mA

• Low Gate to Anode Leakage Current — 10 nA Maximum

• High Peak Output Voltage — 11 Volts Typical

• Low Offset Voltage — 0.35 Volt Typical (R = 10 k ohms)

• Device Marking: Logo, Device Type, e.g., 2N6027, Date Code

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

*Power Dissipation

Derate Above 25°C

1/θ

300

4.0

mW/°C

*DC Forward Anode Current

Derate Above 25°C

150

2.67

mA/°C

TO–92 (TO–226AA)

CASE 029

STYLE 16

*DC Gate Current

Repetitive Peak Forward Current

100 µs Pulse Width, 1% Duty Cycle

*20 µs Pulse Width, 1% Duty Cycle

Amps

TRM

PIN ASSIGNMENT

Anode

1.0

2.0

Gate

Non–Repetitive Peak Forward Current

10 µs Pulse Width

5.0

Amps

TSM

Cathode

*Gate to Cathode Forward Voltage

*Gate to Cathode Reverse Voltage

*Gate to Anode Reverse Voltage

5.0

Volts

°C

GKF

GKR

GAR

ORDERING INFORMATION

Seedetailedorderingandshippinginformationinthepackage

dimensions section on page 7 of this data sheet.

(1)

*Anode to Cathode Voltage

Operating Junction Temperature Range

–50 to

+100

Preferred devices are recommended choices for future use

and best overall value.

*Storage Temperature Range

stg

–55 to

+150

°C

*Indicates JEDEC Registered Data

(1) Anode positive, R

= 1000 ohms

Anode negative, R

= open

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 2

2N6027/D

12 3 4 5 6 7 8

中文翻译

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2N6028G 替代型号

型号	品牌	替代类型	描述	数据表
2N6028RLRPG	ONSEMI	完全替代	Programmable Unijunction Transistor
2N6028RLRMG	ONSEMI	完全替代	Programmable Unijunction Transistor
2N6028RLRAG	ONSEMI	完全替代	Programmable Unijunction Transistor

与2N6028G相关器件

型号	品牌	获取价格	描述	数据表
2N6028LEADFREE	CENTRAL	获取价格	Programmable UJT, TO-92, TO-92, 3 PIN
2N6028RLRA	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6028RLRAG	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6028RLRM	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6028RLRMG	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6028RLRP	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6028RLRPG	ONSEMI	获取价格	Programmable Unijunction Transistor
2N6028TRB	CENTRAL	获取价格	Programmable UJT, TO-92,
2N6028TRC	CENTRAL	获取价格	Programmable UJT, TO-92,
2N6028TRE	CENTRAL	获取价格	暂无描述

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