Datasheet > 2N6027_06

2N6027_06

更新时间： 2024-11-25 02:57:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管可编程单结晶体管
页数	文件大小	规格书
6页	78K
描述
Programmable Unijunction Transistor

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数据手册

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2N6027_06 数据手册

2N6027, 2N6028

Preferred Device

Programmable

Unijunction Transistor

Programmable Unijunction

Transistor Triggers

http://onsemi.com

Designed to enable the engineer to “program’’ unijunction

characteristics such as R , h, I , and I by merely selecting

PUTs

40 VOLTS, 300 mW

two resistor values. Application includes thyristor−trigger, oscillator,

pulse and timing circuits. These devices may also be used in special

thyristor applications due to the availability of an anode gate. Supplied

in an inexpensive TO−92 plastic package for high−volume

requirements, this package is readily adaptable for use in automatic

insertion equipment.

Features

• Programmable − R , h, I and I

• Low On−State Voltage − 1.5 V Maximum @ I = 50 mA

TO−92 (TO−226AA)

CASE 029

• Low Gate to Anode Leakage Current − 10 nA Maximum

• High Peak Output Voltage − 11 V Typical

• Low Offset Voltage − 0.35 V Typical (R = 10 kW)

• Pb−Free Packages are Available*

STYLE 16

MARKING DIAGRAM

602x

AYWW G

2N602x = Device Code

x = 7 or 8

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

PIN ASSIGNMENT

Anode

Gate

Cathode

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Publication Order Number:

May, 2006 − Rev.6

2N6027/D

12 3 4 5 6

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