2N5907

更新时间： 2024-11-02 12:56:39

品牌	Logo	应用领域
MICROSS		晶体小信号场效应晶体管
页数	文件大小	规格书
1页	287K
描述
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N5907 数据手册

2N5907

LOW NOISE, LOW DRIFT

MONOLITHIC DUAL

N-CHANNEL JFET

FEATURES

LOW DRIFT

ULTRA LOW LEAKAGE

LOW PINCHOFF

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

The 2N5907 is a high-performance monolithic dual

JFET featuring tight matching and low drift over

temperature specifications, and is targeted for use in a

wide range of precision instrumentation applications

where tight tracking is required.

| V_GS1‐2/ T| = 5µV/°C TYP.

I_G= 150fA TYP.

V_p= 2V TYP.

The hermetically sealed TO-78 package is well suited

for hi-reliability and harsh environment applications.

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

‐65°C to +150°C

+150°C

(See Packaging Information).

Maximum Voltage and Current for Each Transistor – Note 1

‐V_GSS

‐V_DSO

‐I_G(f)

‐I_G

Gate Voltage to Drain or Source

Drain to Source Voltage

Gate Forward Current

40V

10mA

10µA

Gate Reverse Current

2N5907 Benefits:

Maximum Power Dissipation

Device Dissipation @ Free Air – Total

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

40mW @ +125°C

Tight Tracking

Good matching

Ultra Low Leakage

Low Drift

SYMBOL

CHARACTERISTICS VALUE UNITS CONDITIONS

| V_GS1‐2/ T| max.

DRIFT VS.

TEMPERATURE

µV/°C

V_DG=10V, I_D=30µA

T_A=‐55°C to +125°C

V_DG=10V, I_D=30µA

| V _GS1‐2| max.

OFFSET VOLTAGE

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

BV_GGO

CHARACTERISTICS

Breakdown Voltage

Gate‐To‐Gate Breakdown

TRANSCONDUCTANCE

Full Conduction

MIN.

TYP.

‐‐

MAX.

‐‐

UNITS

CONDITIONS

V_DS= 0

I_G= 1nA

I_D=1nA

I_D= 0

I_S= 0

Y_fSS

Y_fS

|Y_FS1‐2/ Y _FS|

‐‐

300

100

500

200

µmho

V_DG= 10V

V_GS= 0V f = 1kHz

I_D= 30µA f = 1kHz

Typical Operation

Mismatch

DRAIN CURRENT

Full Conduction

I_DSS

|I_DSS1‐2/ I_DSS

‐‐

400

1000

µA

V_DG= 10V

V_GS= 0V

Mismatch at Full Conduction

Click To Buy

GATE VOLTAGE

V_GS(off) or V_p

V_GS(on)

Pinchoff voltage

Operating Range

GATE CURRENT

Operating

0.6

‐‐

4.5

V_DS= 10V

V_DS=10V

I_D= 1nA

I_D=30µA

‐I_Gmax.

‐I_GSSmax.

I_GGO

‐‐

V_DG= 10V I_D= 30µA

T_A= +125°C

V_DS=0V V_GS= 20V

T_A= +125°C

High Temperature

At Full Conduction

High Temperature

Gate‐to‐Gate Leakage

OUTPUT CONDUCTANCE

Full Conduction

Operating

V_GG= 20V

Y_OSS

Y_OS

|Y_OS1‐2

‐‐

0.1

0.01

0.1

V_DG= 10V

V_GS= 0V

I_D=30µA

µmho

Differential

COMMON MODE REJECTION

‐20 log |∆V_GS1‐2/∆V_DS|

NOISE

CMR

‐‐

∆V_DS= 10 to 20V

∆V_DS= 5 to 10V

V_DS= 10V V_GS= 0V

I_D=30µA

R_G= 10MΩ

e_n

Figure

Voltage

‐‐

nV/√Hz

f= 100Hz

NBW= 6Hz

V_DG=10V I_D=30µA f=10Hz NBW=1Hz

CAPACITANCE

C_ISS

C_RSS

C_DD

Input

Reverse Transfer

Drain‐to‐Drain

‐‐

1.5

0.1

V_DS= 10V

V_GS= 0V

f= 1MHz

V_DG= 20V I_D=30µA

Micross Components Europe

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

TO-78 (Bottom View)

Available Packages:

2N5907 in TO-78

2N5907 available as bare die

Please contact Micross for full package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

中文翻译

下载PDF

与2N5907相关器件

型号	品牌	获取价格	描述	数据表
2N5907(TO-78)	MICROSS	获取价格	Transistor
2N5907_TO-78	MICROSS	获取价格	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
2N5908	MICROSS	获取价格	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
2N5908	INTERSIL	获取价格	MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER
2N5908	NJSEMI	获取价格	Trans JFET N-CH 7-Pin TO-78
2N5908_TO-78	MICROSS	获取价格	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
2N5909	INTERSIL	获取价格	MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER
2N5909	NJSEMI	获取价格	Trans JFET N-CH 7-Pin TO-78
2N5909	MICROSS	获取价格	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
2N5909_TO-78	MICROSS	获取价格	LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET

与2N5907相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

2N5907

2N5907 数据手册

与2N5907相关器件

与2N5907相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2N5907

2N5907 数据手册

与2N5907相关器件

与2N5907相关文章

您还可以找

您在本页遇到什么问题？